? 1996 ixys all rights reserved to-247 ad ultra-low v ce(sat) igbt ixgh 38n60 v ces = 600 v i c25 = 76 a v ce(sat) = 1.8 v g c e g = gate, c = collector, e = emitter, tab = collector symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m w 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c76a i c90 t c = 90 c38a i cm t c = 25 c, 1 ms 152 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 w i cm = 76 a (rbsoa) clamped inductive load, l = 100 m h @ 0.8 v ces p c t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (m3) 1.13/10 nm/lb.in. weight 6g maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 m a, v ge = 0 v 600 v v ge(th) i c = 250 m a, v ce = v ge 2.5 5 v i ces v ce = 0.8 ? v ces t j = 25 c 200 m a v ge = 0 v t j = 125 c1ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 1.8 v features l international standard package jedec to-247 ad l 2nd generation hdmos tm process l low v ce(sat) - for minimum on-state conduction losses l high current handling capability l mos gate turn-on - drive simplicity applications l ac motor speed control l dc servo and robot drives l dc choppers l uninterruptible power supplies (ups) l switch-mode and resonant-mode power supplies advantages l easy to mount with 1 screw (isolated mounting screw hole) l low losses, high efficiency l high power density 93025c (7/94)
ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 ixys reserves the right to change limits, test conditions, and dimensions. ixgh 38n60 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 15 20 s pulse test, t 300 m s, duty cycle 2 % c ies 2500 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 230 pf c res 70 pf q g 125 150 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 23 35 nc q gc 50 75 nc t d(on) 30 ns t ri 150 ns t d(off) 600 1200 ns t fi 500 700 ns e off 915mj t d(on) 40 ns t ri 160 ns e on 1mj t d(off) 800 ns t fi 1000 ns e off 15 mj r thjc 0.62 k/w r thck 0.25 k/w to-247 ad outline inductive load, t j = 25 c i c = i c90 , v ge = 15 v, l = 100 m h, v ce = 0.8 v ces , r g = r off = 10 w remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g 1 = gate 2 = collector 3 = emitter tab = collector inductive load, t j = 125 c i c = i c90 , v ge = 15 v, l = 100 m h v ce = 0.8 v ces , r g = r off = 10 w remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g
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